Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness

버퍼막 두께에 따른 ZnO/ZnO/p-Si(111) 이종접합 다이오드 특성 평가

  • Heo, Joo-Hoe (Department of Nano Systems Engineering, Inje University) ;
  • Ryu, Hyuk-Hyun (Department of Nano Systems Engineering, Inje University) ;
  • Lee, Jong-Hoon (Major of Nano Semiconductor, Korea Maritime University)
  • 허주회 (인제대학교 나노시스템공학과) ;
  • 류혁현 (인제대학교 나노시스템공학과) ;
  • 이종훈 (한국해양대학교 응용과학과)
  • Received : 2010.10.22
  • Accepted : 2010.11.24
  • Published : 2011.01.27
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Abstract

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

Keywords

References

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