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Parameterized Simulation Program with Integrated Circuit Emphasis Modeling of Two-level Microbolometer

  • Han, Seung-Oh (Research Center for Convergence Technology, Hoseo University) ;
  • Chun, Chang-Hwan (Department of Defense Science and Technology, Hoseo University) ;
  • Han, Chang-Suk (Department of Defense Science and Technology, Hoseo University) ;
  • Park, Seung-Man (Department of Defense Science and Technology, Hoseo University)
  • Received : 2010.02.27
  • Accepted : 2011.01.17
  • Published : 2011.03.01

Abstract

This paper presents a parameterized simulation program with integrated circuit emphasis (SPICE) model of a two-level microbolometer based on negative-temperature-coefficient thin films, such as vanadium oxide or amorphous silicon. The proposed modeling begins from the electric-thermal analogy and is realized on the SPICE modeling environment. The model consists of parametric components whose parameters are material properties and physical dimensions, and can be used for the fast design study, as well as for the co-design with the readout integrated circuit. The developed model was verified by comparing the obtained results with those from finite element method simulations for three design cases. The thermal conductance and the thermal capacity, key performance parameters of a microbolometer, showed the average difference of only 4.77% and 8.65%, respectively.

Keywords

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