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Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology

  • Lee, Myung-Jae (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Choi, Woo-Young (Department of Electrical and Electronic Engineering, Yonsei University)
  • Received : 2010.11.26
  • Accepted : 2011.03.04
  • Published : 2011.03.25

Abstract

We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

Acknowledgement

Supported by : NRF

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