Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology

  • Lee, Myung-Jae (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Choi, Woo-Young (Department of Electrical and Electronic Engineering, Yonsei University)
  • Received : 2010.11.26
  • Accepted : 2011.03.04
  • Published : 2011.03.25


We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.


Supported by : NRF


  1. C. Gunn, “CMOS photonics for high-speed interconnects,”IEEE Micro 26, 58-66 (2006).
  2. H. Zimmermann and T. Heide, “A monolithically integrated1-Gb/s optical receiver in $1-{\mu}m$ CMOS technology,” IEEEPhoton. Technol. Lett. 13, 711-713 (2001).
  3. B. Yang, J. D. Schaub, S. M. Csutak, D. L. Rogers, and J.C. Campbell, “10-Gb/s all-silicon optical receiver,” IEEEPhoton. Technol. Lett. 15, 745-747 (2003).
  4. H.-S. Kang, M.-J. Lee, and W.-Y. Choi, “Si avalanche photodetectorsfabricated in standard complementary metal-oxide-semiconductorprocess,” Appl. Phys. Lett. 90, 151118-1-151118-3 (2007).
  5. M.-J. Lee and W.-Y. Choi, “A silicon avalanche photodetectorfabricated with standard CMOS technology withover 1 THz gain-bandwidth product,” Opt. Express 18, 24189-24194 (2010).
  6. S. Radovanovic, A.-J. Annema, and B. Nauta, High-speedPhotodiodes in Standard CMOS Technology (Springer, Netherlands,2006).
  7. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices,3rd ed. (Wiley, New Jersey, USA, 2007).
  8. J.-S. Youn, H.-S. Kang, M.-J. Lee, K.-Y. Park, and W.-Y.Choi, “High-speed CMOS integrated optical receiver withan avalanche photodetector,” IEEE Photon. Technol. Lett.21, 1553-1555 (2009).

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