Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Electrical Properties of Flexible Field Effect Transistor Devices Composed of Si Nanowire by Electroless Etching Method

무전해 식각법으로 합성한 Si 나노와이어 Field Effect Transistor 유연소자의 특성

  • Lee, Sang-Hoon (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Moon, Kyeong-Ju (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Hwang, Sung-Hwan (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Tae-Il (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Myoung, Jae-Min (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
  • 이상훈 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 문경주 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 황성환 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 이태일 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 명재민 (연세대학교 신소재공학과 정보전자재료연구실)
  • Received : 2010.12.23
  • Accepted : 2011.01.10
  • Published : 2011.02.27
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Abstract

Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.

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