Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Interface Reaction between ZnO:Al and Amorphous Silicon on Silicon Heterojunction Solar Cells

실리콘 이종 접합 태양 전지 특성에 대한 ZnO:Al과 비정질 실리콘 계면 반응의 영향

  • Kang, Min-Gu (Department of Materials Science and Engineering, Korea University) ;
  • Tark, Sung-Ju (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Jong-Han (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Chan-Seok (Department of Materials Science and Engineering, Korea University) ;
  • Jung, Dae-Young (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Lee, Jung-Chul (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Kim, Dong-Hwan (Department of Materials Science and Engineering, Korea University)
  • 강민구 (고려대학교 신소재공학과) ;
  • 탁성주 (고려대학교 신소재공학과) ;
  • 이종한 (고려대학교 신소재공학과) ;
  • 김찬석 (고려대학교 신소재공학과) ;
  • 정대영 (한국에너지기술연구원 태양광연구단) ;
  • 이정철 (한국에너지기술연구원 태양광연구단) ;
  • 윤경훈 (한국에너지기술연구원 태양광연구단) ;
  • 김동환 (고려대학교 신소재공학과)
  • Received : 2010.12.10
  • Accepted : 2011.01.14
  • Published : 2011.02.27
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Abstract

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

Keywords

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