Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Properties of ZnO:Al Thin Films Deposited by RF Magnetron Sputtering with Various Base Pressure

RF Magnetron Sputtering법으로 제작한 ZnO:Al 박막의 초기 압력에 따른 특성

  • Kim, D.K. (School of Electronics Engineering, Chungbuk National University) ;
  • Kim, H.B. (Division of Electronics and Information Engineering, Cheongju University)
  • 김덕규 (충북대학교 전자공학부) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • Received : 2010.11.16
  • Accepted : 2011.03.03
  • Published : 2011.03.30
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Abstract

ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.

ZnO:Al 박막을 RF magnetron sputtering 법을 이용하여 초기 압력에 따라 증착하고 박막의 구조적, 광학적, 전기적 특성을 연구하였다. 초기 압력 변화에 의해 ZnO:Al 박막의 특성의 변화를 확인하였고 고품질의 박막을 얻을 수 있었다. 모든 ZnO:Al 박막에서 (002)면의 우선 배향성을 보였으며 가시광선 영역(400~800 nm)에서 85% 이상의 좋은 투과도를 보였다. 초기 압력이 낮아질수록 결정성, 비저항 그리고 성능지수 특성이 향상됨을 확인하였다. 초기 압력에 따른 비저항의 향상은 결정립 크기 변화에 의한 것으로 판단된다.

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