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후면 형상에 따른 결정질 실리콘 태양전지의 후면전계 형성 및 특성

Back Surface Field Properties with Different Surface Conditions for Crystalline Silicon Solar Cells

  • 김현호 (고려대학교 마이크로/나노 시스템) ;
  • 김성탁 (고려대학교 신소재공학과) ;
  • 박성은 (고려대학교 신소재공학과) ;
  • 송주용 (고려대학교 신소재공학과) ;
  • 김영도 (고려대학교 신소재공학과) ;
  • 탁성주 (고려대학교 신소재공학과) ;
  • 권순우 (대한제당주식회사 중앙연구소) ;
  • 윤세왕 (대한제당주식회사 중앙연구소) ;
  • 손창식 (신라대학교 전자재료공학과) ;
  • 김동환 (고려대학교 마이크로/나노 시스템)
  • Kim, Hyun-Ho (Department of Micro/Nano Systems, Korea University) ;
  • Kim, Seong-Tak (Department of Materials Science and Engineering, Korea University) ;
  • Park, Sung-Eun (Department of Materials Science and Engineering, Korea University) ;
  • Song, Joo-Yong (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Young-Do (Department of Materials Science and Engineering, Korea University) ;
  • Tark, Sung-Ju (Department of Materials Science and Engineering, Korea University) ;
  • Kwon, Soon-Woo (R&D Center, TS Corporation) ;
  • Yoon, Se-Wang (R&D Center, TS Corporation) ;
  • Son, Chang-Sik (Department of Electronic Materials Engineering, Silla University) ;
  • Kim, Dong-Hwan (Department of Micro/Nano Systems, Korea University)
  • 투고 : 2011.03.09
  • 심사 : 2011.04.06
  • 발행 : 2011.05.27

초록

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

키워드

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