한국재료학회지 (Korean Journal of Materials Research)

  • 제21권5호
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  • Pages.273-276
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  • 2011
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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나노 구조의 패턴을 갖는 n-type GaN 기판을 이용한 380 nm UV-LED의 광 추출 효율 개선

Improvement in Light Extraction Efficiency of 380 nm UV-LED Using Nano-patterned n-type Gan Substrate

  • Baek, Kwang-Sun (Department of Materials Science & Engineering, Chonnam National University) ;
  • Jo, Min-Sung (Department of Materials Science & Engineering, Chonnam National University) ;
  • Lee, Young-Gon (Department of Materials Science & Engineering, Chonnam National University) ;
  • Sadasivam, Karthikeyan Giri (Department of Materials Science & Engineering, Chonnam National University) ;
  • Song, Young-Ho (Korea Photonics Technology Institute) ;
  • Kim, Seung-Hwan (Korea Photonics Technology Institute) ;
  • Kim, Jae-Kwan (Korea Photonics Technology Institute) ;
  • Jeon, Seong-Ran (Korea Photonics Technology Institute) ;
  • Lee, June-Key (Department of Materials Science & Engineering, Chonnam National University)
  • 투고 : 2011.03.08
  • 심사 : 2011.04.13
  • 발행 : 2011.05.27
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초록

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

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참고문헌

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