Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Fabrication and Characterization of NiMn2O4 NTC Thermistor Thick Films by Aerosol Deposition

상온 진공 분말 분사법에 의한 NiMn2O4계 NTC Thermistor 후막제작 및 특성평가

  • Baek, Chang-Woo (Department of Materials Science and Engineering, Myongji University) ;
  • Han, Gui-fang (Functional Ceramics Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Hahn, Byung-Dong (Functional Ceramics Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Yoon, Woon-Ha (Functional Ceramics Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Choi, Jong-Jin (Functional Ceramics Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Park, Dong-Soo (Functional Ceramics Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Ryu, Jung-ho (Functional Ceramics Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Jeong, Dae-Yong (Department of Materials Science and Engineering, Myongji University)
  • 백창우 (명지대학교 신소재공학과) ;
  • 한귀팡 (재료연구소 기능성세라믹연구그룹) ;
  • 한병동 (재료연구소 기능성세라믹연구그룹) ;
  • 윤운하 (재료연구소 기능성세라믹연구그룹) ;
  • 최종진 (재료연구소 기능성세라믹연구그룹) ;
  • 박동수 (재료연구소 기능성세라믹연구그룹) ;
  • 류정호 (재료연구소 기능성세라믹연구그룹) ;
  • 정대용 (명지대학교 신소재공학과)
  • Received : 2011.02.28
  • Accepted : 2011.04.13
  • Published : 2011.05.27
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Abstract

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

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References

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