DOI QR코드

DOI QR Code

Solution-processed electrophosphorescent devices with a thin fluoropolymer at the hole transport interfacial layer

  • Park, Jae-Kyun (Department of Polymer Science and Engineering, Dankook University) ;
  • Hwang, Gyoung-Seok (Department of Polymer Science and Engineering, Dankook University) ;
  • Lee, Tae-Woo (Department of Materials Science and Engineering, Pohang University of Science and Technology) ;
  • Chin, Byung-Doo (Department of Polymer Science and Engineering, Dankook University)
  • Received : 2011.08.15
  • Accepted : 2011.09.05
  • Published : 2011.12.31

Abstract

Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

Keywords

References

  1. V. Cleave, G.Yahioglu, P. Le Barny, R.H. Friend, N. Tessler, Adv. Mater. (Weinheim, Ger.) 11, 285 (1999). https://doi.org/10.1002/(SICI)1521-4095(199903)11:4<285::AID-ADMA285>3.0.CO;2-N
  2. X. H. Yang, D. Neher, Appl. Phys. Lett. 84, 2476 (2004). https://doi.org/10.1063/1.1691194
  3. M.-H. Kim, M. C. Suh, J. H. Kwon, B. D. Chin, Thin Solid Film, 515, 4011 (2007). https://doi.org/10.1016/j.tsf.2006.10.067
  4. P. K. H. Ho, J. S. Kim, J. H. Burroughes, H. Becker, S. F. Y. Li, T. M. Brown, F. Cacialli, R. H. Friend, Nature 404, 481 (2000). https://doi.org/10.1038/35006610
  5. P. K. H. Ho, M. Granstrom, R. H. Friend, N. C. Greenham, Adv. Mater. (Weinheim, Ger.) 10, 769 (1998). https://doi.org/10.1002/(SICI)1521-4095(199807)10:10<769::AID-ADMA769>3.0.CO;2-3
  6. T.-W. Lee,Y. Chung, O. Kwon, J.-J. Park, Adv. Funct. Mater. 17, 390 (2007). https://doi.org/10.1002/adfm.200600278
  7. M.-R. Choi, T.-H. Han, K.-G. Lim, S.-H. Woo, D. H. Huh, T.-W. Lee, Angew. Chem. Int. Ed. 50, 1 (2011). https://doi.org/10.1002/anie.201006633
  8. M. Sudhakar, P. I. Djurovich, T. E. Hogen-Esch, M. E. Thompson, J. Am. Chem. Soc., 125, 7796 (2003). https://doi.org/10.1021/ja0343297
  9. N. S. Kang, B.-K. Ju, J. W. Kim, J.-J. Kim, J.-W. Yu, B. D. Chin, J. Appl. Phys. 104, 024511 (2008). https://doi.org/10.1063/1.2959817
  10. N. Rehmann, C. Ulbricht, A. Köhnen, P. Zacharias, M. C. Gather, D. Hertel, E. Holder, K. Meerholz, U. S. Schubert, Adv. Mater. (Weinheim, Ger.) 20, 129 (2008). https://doi.org/10.1002/adma.200701699
  11. J. K. Park, G. S. Hwang, B. D. Chin, N. S. Kang, T.-W. Lee, Curr. Appl. Phys. (2011) doi:10.1016/j.cap.2011.04.030.
  12. W. S. Jeon, T. J. Park, J. H. Kwon, J. Information Display, 10, 87 (2009). https://doi.org/10.1080/15980316.2009.9652087
  13. E. Bohm, R. Anemian, A. Busing, R. Fortte, H. Heil, J. Kaiser, J. Krober, S. Leu, T. Mujica-Fernaud, A. Parham, C. Pflumm & F. Voges, J. Information Display, 12, 141(2011). https://doi.org/10.1080/15980316.2011.593909
  14. M.-R. Choi, T.-H. Han, K.-G. Lim, S.-H. Woo, D. H. Huh, T.-W. Lee, Angew. Chem. Int. Ed. (2011) doi:10.1002/anie.201005031.