The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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Analysis of Optimum Impedance for X-Band GaN HEMT using Load-Pull

로드-풀을 이용한 X-Band GaN HEMT의 최적 임피던스 분석

  • 김민수 (경남대학교 정보통신공학과) ;
  • 이영철 (경남대학교 정보통신공학과)
  • Received : 2011.08.10
  • Accepted : 2011.10.12
  • Published : 2011.10.31
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Abstract

In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

본 논문에서는 로드-풀을 이용하여 X-band에서 on-Wafer 상태의 GaN HEMT 소자에 대한 성능을 분석하고 분석한 결과를 바탕으로 최적의 임피던스 점을 분석하였다. 패키징 하기 전 on-Wafer 상태에 있는 반도체 소자의 최적의 임피던스 분석을 통해 소자 자체에서 최적의 성능을 내는 방안을 제안하였다. Gate length가 0.25um이고 Gate Width가 각각 400um, 800um인 소자에 대한 최적의 임피던스를 선정하여 성능을 분석한 결과, 400um는 $P_{sat}$=33.16dBm(2.06W), PAE=67.36%, Gain=15.16dBm의 성능을 가지며, 800um는 $P_{sat}$=35.9 dBm(3.9W), PAE=69.23%, Gain=14.87dB의 성능을 보였다.

Keywords

References

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