한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권8호
  • /
  • Pages.674-677
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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비정질 하프늄인듐징크옥사이드 산화물 반도체의 공정 파워에 따른 트랜지스터의 전기적 특성 연구

Study on the Electrical Properties of Amorphous HfInZnO TFTs Depending on Sputtering Power

  • 유동윤 (한국과학기술연구원 전자재료연구단) ;
  • 정유진 (한국과학기술연구원 전자재료연구단) ;
  • 김도형 (한국과학기술연구원 전자재료연구단) ;
  • 주병권 (고려대학교 일반대학원) ;
  • 이상렬 (한국과학기술연구원 전자재료연구단)
  • Yoo, Dong-Youn (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Chong, Eu-Gene (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Kim, Do-Hyung (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Ju, Byeong-Kwon (Department of Electrical Engineering, Display and Nanosystem Laboratory, Korea University) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
  • 투고 : 2011.07.12
  • 심사 : 2011.07.24
  • 발행 : 2011.08.01
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초록

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

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참고문헌

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