Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Annealing and In Interlayer Effects on the Photovoltaic Properties of CBD-In2S3/CIGS Solar Cells

열처리와 In 중간층 적용에 의한 CBD-In2S3/CIGS 태양전지의 특성 향상

  • Kim, Hee-Seop (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Ji-Hye (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Shin, Dong-Hyeop (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 김희섭 (한국과학기술원 신소재공학과) ;
  • 김지혜 (한국과학기술원 신소재공학과) ;
  • 신동협 (한국과학기술원 신소재공학과) ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Received : 2011.07.05
  • Accepted : 2011.07.26
  • Published : 2011.08.27
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Abstract

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

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References

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