Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Transmission Line Analysis of Accumulation Layer in IEGT

  • Moon, Jin-Woo (PTD_Korea, Analog Technology Development, Fairchild Semiconductor) ;
  • Chung, Sang-Koo (School of Electronics Engineering, Ajou University)
  • Received : 2010.04.30
  • Accepted : 2011.03.07
  • Published : 2011.11.01
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Abstract

Transmission line analysis of the surface a cumulation layer in injection-enhanced gate transistor (IEGT) is presented for the first time, based on per-unit-length resistance and conductance of the surface layer beneath the gate of IEGT. Lateral electric field on the accumulation layer surface, as well as the electron current injected into the accumulation layer, is governed by the well-known wave equation, and decreases as an exponential function of the lateral distance from the cathode. Unit-length resistance and conductance of the layer are expressed in terms of the device parameters and the applied gate voltage. Results obtained from the experiments are consistent with the numerical simulations.

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References

  1. Kon, K. Nakayama, S. Yanagisawa, J. Miwa, Y. Uetake, "The 4500V-750A planar gate press pack IEGT," Proc.ISPSD'98, pp. 81-84, 1988.
  2. S. C. Sun, J. D. Plummer, "Modeling of the On-Resistance of LDMOS, VDMOS, and VMOS Power Transistors," IEEE Trans. on Electron Devices, vol. ED-27, pp. 356-367, 1980.
  3. Udrea F. Amaratunga, "Theoretical and numerical comparison between trench and DMOS technology for IGBT's," IEEE Trans. Electron Devices, vol. ED-42, No. 7, pp. 1356-1366, 1995.
  4. A. R. Hefner and D. L. Blackburn, "An analytical model for the steady-state and transient characteristics of the power insulated gate bipolar transistor," Solid-State Electronics, vol. 31, p. 1513, 1988. https://doi.org/10.1016/0038-1101(88)90025-1
  5. P. M. Igic, M. S. Towers, P. A. Mawby, "A 2D physically based compact model for advanced power bipolar devices," Microelectronics Journal, vol. 35, pp. 591-594, 2004. https://doi.org/10.1016/j.mejo.2004.02.006
  6. Jin-woo Moon, Yearn-Ik Choi and Sang-Koo Chung,"Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor," Solid-State Electronics, vol. 49, No. 5, pp. 834-837, 2005. https://doi.org/10.1016/j.sse.2005.01.025
  7. Jin-Woo Moon and Sang-Koo Chung, "An analytical expression for current gain of an IGBT," Journal of Electrical Engineering & Technology, Vol.4, No. 3, pp. 401-404, 2009 https://doi.org/10.5370/JEET.2009.4.3.401