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A Study of Ferroelectric Properties of the Oscillator Model of PZT-22

  • Received : 2010.04.29
  • Accepted : 2010.09.14
  • Published : 2011.02.28

Abstract

In this letter, we study the contemporary technologies for making ferroelectric films and the possibility of using the oscillator model of PZT-22 to analyze its ferroelectric properties. The material showed permittivity dispersion at 65 KHz and 88.5 KHz. We obtained relative attenuation ${\gamma}$, relaxation time ${\tau}$, and ${\varepsilon}_{max}$ of the material as 0.0008319, 0.5 s, and 603.438, respectively.

Keywords

References

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Cited by

  1. Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor vol.35, pp.4, 2011, https://doi.org/10.4218/etrij.13.0212.0280