한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권1호
  • /
  • Pages.44-47
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  • 2012
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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TiO2/Si3N4/Ag/Si3N4/TiO2 다층구조에서 Si3N4 버퍼층이 투과율에 미치는 영향

Effect of Si3N4 Buffer Layer on Transmittance of TiO2/Si3N4/Ag/Si3N4/TiO2 Multi Layered Structure

  • 이서희 (충북대학교 신소재공학과) ;
  • 장건익 (충북대학교 신소재공학과)
  • Lee, Seo-Hee (Department of Materials Engineering, Chungbuk National University) ;
  • Jang, Gun-Eik (Department of Materials Engineering, Chungbuk National University)
  • 투고 : 2011.10.28
  • 심사 : 2011.12.02
  • 발행 : 2012.01.01
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초록

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

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참고문헌

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