Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate

수소 분위기에서 유연 기판 위에 증착된 IZO 박막의 구조적 및 전기적 특성

  • Jo, D.B. (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, K.M. (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 조담비 (한국기술교육대학교 신소재공학과) ;
  • 이규만 (한국기술교육대학교 신소재공학과)
  • Received : 2012.02.14
  • Accepted : 2012.03.15
  • Published : 2012.03.31
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Abstract

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

Keywords

References

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