The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지
DOI QR코드

DOI QR Code

A Study of CMOS Device Latch-up Model with Transient Radiation

과도방사선에 의한 CMOS 소자 Latch-up 모델 연구

  • 정상훈 (전북대학교 전자공보공학부, 한국원자력연구원) ;
  • 이남호 (한국원자력연구원) ;
  • 이민수 (한국과학기술원) ;
  • 조성익 (전북대학교 전자공학부)
  • Received : 2011.09.27
  • Accepted : 2012.01.31
  • Published : 2012.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

Keywords

References

  1. Larry L., "NUCLEAR EVENT DETECTOR", http://www.freepatentsonline.com/, pp. 2, Aug 1987.
  2. George C Messenger, "The effects of radiation on electronic systems", New York : Van Nostrand Reinhold, cop., 1992.
  3. Lewis Cohn, Manfred Espig, Al Wolicki, Mayrant Simons, Clay Rogers, Alfred Costantine, "Transient Radiation Effects on Electronics(TREE) Handbook", Defence Nuclear Agency, 1996.
  4. Ahlbin, J., Gadlage, M., Atkinson, N., Narasimham, B., Bhuva, B., Witulski, A., Holman, W. Ea- ton, P. ; Massengill, L., "Effect of Multiple -Transistor Charge Collection on Single-Event Transient Pulse Widths", Device and Materials Reliability, IEEE Transactions on, Issue, 99, pp 1, May, 2011,
  5. Daisuke Kobayashi, Kazuyuki Hirose, Véronique Ferlet-Cavrois, Dale McMorrow, Takahiro Makino, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno, "Device-Physics-Based Analytical Model for Single-Event Transients in SOI CMOS Logic", NUCLEAR SCIENCE, IEEE Transactions on, Vol. 56, No. 6, pp 3043-3049, December 2009. https://doi.org/10.1109/TNS.2009.2034004

Cited by

  1. A Study on Implementation of a Transient Radiation Effects on Electronics(TREE) Assessment System Based on M&S vol.62, pp.7, 2013, https://doi.org/10.5370/KIEE.2013.62.7.969
  2. Implementation of the Radiation Protection Module for Electronic Equipment from Pulsed Radiation and Its Function Tests vol.62, pp.10, 2013, https://doi.org/10.5370/KIEE.2013.62.10.1421
  3. A Parametric Study of Pulsed Gamma-ray Detectors Based on Si Epi-Wafer vol.18, pp.7, 2014, https://doi.org/10.6109/jkiice.2014.18.7.1777
  4. The Study of Radiation Hardened Common Sensor Circuits using COTS Semiconductor Devices for the Nuclear Power Plant vol.63, pp.9, 2014, https://doi.org/10.5370/KIEE.2014.63.9.1248