Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method

  • Lee, Sang-Hyun (Department of Inorganic Materials Engineering, Kyungpook National University) ;
  • Lee, Seung-Yup (Department of Inorganic Materials Engineering, Kyungpook National University) ;
  • Park, Byung-Ok (Department of Inorganic Materials Engineering, Kyungpook National University)
  • Received : 2011.10.21
  • Accepted : 2011.12.02
  • Published : 2012.02.29
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Abstract

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

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References

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