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Effect of Ar Ion Irradiation on the Hydrogen Gas Sensitivity of SnO2 Thin Films

Ar 이온빔 조사에 따른 SnO2 박막의 물성 연구

  • Heo, S.B. (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Y.J. (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, S.K. (School of Materials Science and Engineering, University of Ulsan) ;
  • You, Y.Z. (School of Materials Science and Engineering, University of Ulsan) ;
  • Choi, D.H. (Innovation Planning Team, Shinki Intetmobile LTD.) ;
  • Lee, B.H. (Innovation Planning Team, Shinki Intetmobile LTD.) ;
  • Kim, M.G. (Innovation Planning Team, Shinki Intetmobile LTD.) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 허성보 (울산대학교 첨단소재공학부) ;
  • 이영진 (울산대학교 첨단소재공학부) ;
  • 김선광 (울산대학교 첨단소재공학부) ;
  • 유용주 (울산대학교 첨단소재공학부) ;
  • 최대한 ((주) 신기인터모빌 혁신기획팀) ;
  • 이병훈 ((주) 신기인터모빌 혁신기획팀) ;
  • 김민규 ((주) 신기인터모빌 혁신기획팀) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2012.09.27
  • Accepted : 2012.11.20
  • Published : 2012.11.30

Abstract

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

Keywords

References

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