Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Interfacial Adhesion Energy of Ni-P Electroless-plating Contact for Buried Contact Silicon Solar Cell using 4-point Bending Test System

4점굽힘시험법을 이용한 함몰전극형 Si 태양전지의 무전해 Ni-P 전극 계면 접착력 평가

  • Kim, Jeong-Kyu (School of Materials Science and Engineering, Andong National University) ;
  • Lee, Eun-Kyung (Materials Processing Division, Korea Institute of Materials Science) ;
  • Kim, Mi-Sung (Materials Processing Division, Korea Institute of Materials Science) ;
  • Lim, Jae-Hong (Materials Processing Division, Korea Institute of Materials Science) ;
  • Lee, Kyu-Hwan (Materials Processing Division, Korea Institute of Materials Science) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
  • 김정규 (안동대학교 신소재공학부 청정에너지소재기술연구센터) ;
  • 이은경 (한국기계연구원 부설 재료연구소 융합공정연구본부) ;
  • 김미성 (한국기계연구원 부설 재료연구소 융합공정연구본부) ;
  • 임재홍 (한국기계연구원 부설 재료연구소 융합공정연구본부) ;
  • 이규환 (한국기계연구원 부설 재료연구소 융합공정연구본부) ;
  • 박영배 (안동대학교 신소재공학부 청정에너지소재기술연구센터)
  • Received : 2012.03.02
  • Accepted : 2012.03.22
  • Published : 2012.03.31
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Abstract

In order to develop electroless-plated Nickel Phosphate (Ni-P) as a contact material for high efficient low-cost silicon solar cells, we evaluated the effect of ambient thermal annealing on the degradation behavior of interfacial adhesion energy between electroless-plated Ni-P and silicon solar cell wafers by applying 4-point bending test method. Measured interfacial adhesion energies decreased from 14.83 to 10.83 J/$m^2$ after annealing at 300 and $600^{\circ}C$, respectively. The X-ray photoelectron spectroscopy analysis suggested that the bonding interface was degraded by environmental residual oxygen, in which the oxidation inhibit the stable formation of Ni silicide phase between electroless-plated Ni-P and silicon interface.

고효율, 저가격의 태양전지를 위해 습식공정 중 하나인 Ni-P 무전해 도금을 이용한 실리콘 태양전지 웨이퍼를 열처리에 따른 4점굽힘시험을 통해 정량적인 계면 접착에너지를 평가하였다. 실험 결과 실리콘 태양전지 웨이퍼와 Ni-P 박막 사이의 계면접착에너지는 $14.83{\pm}0.76J/m^2$이며, 후속 열처리에 따른 실리콘 태양전지 웨이퍼와 Ni-P 무전해 도금은 $300^{\circ}C$ 처리 시 $12.33{\pm}1.16J/m^2$, $600^{\circ}C$ 처리 시 $10.83{\pm}0.42J/m^2$로써 전반적으로 높은 계면접착에너지를 가지나 열처리 온도가 증가할수록 계면접착에너지가 서서히 감소하였다. 4점굽힘시험 후 박리된 파면의 미세구조를 관찰 및 분석하여 내부의 파괴경로를 확인하였으며, X-선 광전자 분광법을 통하여 표면화학 결합상태를 분석한 결과 열처리 시 Ni-O와 Si-O 형태의 결합이 존재하여 약한 계면을 형성하기 때문인 것으로 판단된다.

Keywords

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