Tribology and Lubricants

Korean Tribology Society (한국트라이볼로지학회)
권호 표지
DOI QR코드

DOI QR Code

Slurry Particle behavior inside Pad Pore during Chemical Mechanical Polishing

기계화학적 연마공정중 패드내 미세공극에서의 연마입자의 거동

  • Kwark, Haslomi (Graduate School of Hannam University, Dept. of Mechanical Engineering) ;
  • Yang, Woo-Yul (Graduate School of Hannam University, Dept. of Mechanical Engineering) ;
  • Sung, In-Ha (Dept. of Mechanical Engineering, Hannam University)
  • Received : 2011.12.01
  • Accepted : 2011.12.28
  • Published : 2012.02.28
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

Keywords

References

  1. Eusner, T., Saka, N., and Chun, J. H., et al., "Controlling Scratching in Cu Chemical Mechanical Planarization," Journal of The Electrochemical Society, Vol. 156, pp. H528, 2009. https://doi.org/10.1149/1.3121964
  2. Saka, N., Eusner, T., and Chun, J. H., "Scratching by Pad Asperities in Chemical-mechanical Polishing," CIRP Annals - Manufacturing Technology, Vol. 59, No. 1, pp. 329-332, 2010. https://doi.org/10.1016/j.cirp.2010.03.113
  3. Hung, C.-C., Lee, W.-H., and Chang, S.-C., et al., "Investigation of Copper Scratches and Void Defects after Chemical Mechanical Polishing," Japanese Journal of Applied Physics, Vol. 47, No. Copyright (C) 2008 The Japan Society of Applied Physics, p. 7073.
  4. Chandra, A., Karra, P., and Bastawros, A. F., et al., "Prediction of Scratch Generation in Chemical Mechanical Planarization," CIRP Annals - Manufacturing Technology, Vol. 57, No. 1, pp. 559-562, 2008. https://doi.org/10.1016/j.cirp.2008.03.130
  5. 김동균, 성인하, "입자연마가공에서의 입자 형상의 영향에 대한 고찰," 한국윤활학회지, 제26권, 제4호, pp. 219-223, 2010.
  6. 양우열, 양지철, 성인하, "입자연마가공에서의 압력속도 및 유체점도의 영향에 대한 고찰," 한국윤활학회지, 제27권, 제1호, pp. 7-12, 2011.
  7. 곽하슬로미, 김욱배, 성인하, "입자연마가공에서의 입자크기 및 충돌각의 영향에 대한 고찰," 한국윤활학회지, 제27권, 제1호, pp. 34-39, 2011. https://doi.org/10.9725/kstle.2011.27.1.034
  8. Bathe, K., Zhang, H., and Ji, S., "Finite Element Analysis of Fluid Flows Fully Coupled with Structural Interactions," Computers and Structures, Vol. 72, No. 1, pp. 1-16, 1999. https://doi.org/10.1016/S0045-7949(99)00042-5
  9. De, S., Hong, J., and Bathe, K., "On the Method of Finite Spheres in Applications: Towards the use with ADINA and in a Surgical Simulator," Computational Mechanics, Vol. 31, No. 1, pp. 27-37, 2003. https://doi.org/10.1007/s00466-002-0390-3
  10. Li, Y. Microelectronic applications of chemical mechanical planarization: Wiley-Interscience, 2007.
  11. Feng, J., Wang, D., and Liu, H., et al., "Finite Element Simulation of Thermal Stress During Diffusion Bonding of Al2O3 Ceramic to Aluminium," Science and Technology of Welding and Joining, Vol. 8, No. 2, pp. 138-142, 2003. https://doi.org/10.1179/136217103225008838
  12. Yang, J., Oh, D., and Kim, H., et al., "Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)," Journal of Electronic Materials, Vol. 39, No. 3, pp. 338-346, 2010. https://doi.org/10.1007/s11664-009-1064-0
  13. Kim, H. J., "Fundamental Studies on the Scratches during CMP", Proceedings of the ICPT(International Conference on Planarization/CMP Technology), Pheonix, USA, 2010.