Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Relation of Threshold Voltage and Scaling Theory for Double Gate MOSFET

DGMOSFET의 문턱전압과 스켈링 이론의 관계

  • Received : 2012.02.13
  • Accepted : 2012.03.14
  • Published : 2012.05.31
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Abstract

This paper has presented the relation of scaling theory and threshold voltage of double gate(DG) MOSFET. In the case of conventional MOSFET, current and switching frequency have been analyzed based on scaling theory. To observe the possibility of application of scaling theory for threshold voltage of DGMOSFET, the change of threshold voltage has been observed and analyzed according to scaling theory. The analytical potential distribution of Poisson equation has been used, and this model has been already verified. To solve Poisson equation, charge distribution such as Gaussian function has been used. As a result, it has been observed that threshold voltage is grealty changed according to scaling factor and change rate of threshold voltages is traced for scaling of doping concentration in channel. This paper has explained for the best modified scaling theory reflected the influence of two gates as using weighting factor when scaling theory has been applied for channel length and channel thickness.

본 연구에서는 이중게이트(Double Gate; DG) MOSFET에서 문턱전압과 스켈링 이론의 관계를 관찰하였다. 기존 MOSFET의 경우 채널크기에 스켈링 이론을 적용하여 전류 및 스위칭주파수를 해석하였다. 이에 본 연구에서는 이중게이트 MOSFET에서 문턱전압의 경우 스켈링 이론의 적용가능성을 관찰하기 위하여 문턱전압의 변화를 스켈링 인자에 따라 관찰하고 분석하였다. 이를 위하여 이미 검증된 포아송방정식의 해석학적 전위분포를 이용하였으며 이때 가우스함수의 전하분포를 사용하였다. 분석결과 문턱전압이 스켈링 인자에 따라 크게 변화하였으며 변화정도는 도핑농도의 스켈링에 따라 변화한다는 것을 관찰하였다. 특히 이중게이트의 특성상 채널두께 및 채널길이에 스켈링 이론을 적용할 때 가중치를 이용한 변형된 스켈링 이론을 적용함으로써 이중게이트 MOSFET에 가장 타당한 스켈링 이론에 대하여 설명할 것이다.

Keywords

References

  1. U.Monga, T.A.Fjeldly, "Compact Sub- threshold Current Modeling of Short-Channel Nanoscale Double-Gate MOSFET," IEEE Trans. on Elec. Devices Vol.56, No.7, pp. 1533-1537, 2009. https://doi.org/10.1109/TED.2009.2021714
  2. Z.Ding, G.Hu, H.Gu, R.Liu, L.Wang and T.Ting, "An Analytical Model for the Subthreshold Swing of Double-Gate MOSFETs:," IWJT-2010, May 2010.
  3. T.Dutta and S.Dasgupta,"Double Gate Underlap FinFET Device Optimization and Application in SRAM Design at 15nm," 2009 int'l conference on Emerging Trends in Electronic and Photonic Device & Systems, pp.66-69, 2009.
  4. S.H.Oh, D.Monroe and J.M. Hergenrother, "Analytic Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate MOSFETs," IEEE Electron Device Letters, Vol.21, No.9, pp.445-447, 2000. https://doi.org/10.1109/55.863106
  5. M.A.Abdi, F.Djeffal, D.Arar and T.Bendib, "An analytical subthreshold swing model to study the scalability limits of double-gate MOSFETs including bulk traps effects,"2010 Int'l conference on Design & Technology of Integrated Systems in Nanoscales Era, pp.1-6, 2010.
  6. P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," IMPACT-2009, pp.52-55, 2009.
  7. A.S.Havaldar, G.Katti, N.DasGupta and A.DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 53, no.4, pp.737-741, 2006. https://doi.org/10.1109/TED.2006.870874
  8. H.K.Jung, "Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function," International Journal of KIMICS, Vol.9, No.3, pp.310-314, 2011.