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Fabrication and Electrical Properities of Semiconducting YBa2Cu3O7-x thin Film or Application of IR Sensors

적외선 센서로의 응용을 위한 반도성 YBa2Cu3O7-x 박막의 제작 및 전기적 특성

  • 정재운 (경상대 공대 세라믹공학과) ;
  • 조서현 (경상대 공대 세라믹공학과) ;
  • 이성갑 (경상대 공학원 세라믹공학과)
  • Received : 2012.06.26
  • Accepted : 2012.08.23
  • Published : 2012.09.01

Abstract

$YBa_2Cu_3O_{7-x}$ thin films were fabricated by the spin-coating method on $SiO_2$/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around $720^{\circ}C-800^{\circ}C$. $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $450^{\circ}C{\sim}500^{\circ}C$ showed the single XRD patterns without the second phase, such as $YBa_2Cu_4O_8$. The thickness of films was approximately $0.23{\mu}m{\sim}0.27{\mu}m$. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $500^{\circ}C$ were $0.27{\mu}m$, $59.7M{\Omega}$ and -3.7 %/K, respecvitely.

Keywords

References

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