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Integrated IR Photo Sensor for Display Application

디스플레이 패널에 집적이 가능한 적외선 포토센서

  • Jeon, Ho-Sik (Department of Semiconductor and Display Engineering, Hoseo Univ.) ;
  • Heo, Yang-Wook (Department of Digital Display Engineering, Hoseo Univ.) ;
  • Lee, Jae-Pyo (Department of Digital Display Engineering, Hoseo Univ.) ;
  • Han, Sang-Youn (LCD Research and Development Center, Samsung Display) ;
  • Bae, Byung-Seong (Department of Semiconductor and Display Engineering, Hoseo Univ.)
  • 전호식 (호서대학교 반도체 디스플레이학과) ;
  • 허양욱 (호서대학교 디지털 디스플레이학과) ;
  • 이재표 (호서대학교 디지털 디스플레이학과) ;
  • 한상윤 (삼성 디스플레이 LCD 연구소) ;
  • 배병성 (호서대학교 반도체 디스플레이학과)
  • Received : 2011.12.30
  • Accepted : 2012.10.04
  • Published : 2012.11.01

Abstract

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

Keywords

References

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