ETRI Journal

  • 제34권4호
  • /
  • Pages.485-491
  • /
  • 2012
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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E-Band Wideband MMIC Receiver Using 0.1 ${\mu}m$ GaAs pHEMT Process

  • Kim, Bong-Su (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI) ;
  • Byun, Woo-Jin (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI) ;
  • Kang, Min-Soo (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI) ;
  • Kim, Kwang Seon (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI)
  • 투고 : 2011.10.10
  • 심사 : 2012.01.16
  • 발행 : 2012.08.30
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초록

In this paper, the implementations of a $0.1{\mu}m$ gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.

키워드

참고문헌

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피인용 문헌

  1. 16-QAM OFDM-Based W-Band Polarization-Division Duplex Communication System with Multi-gigabit Performance vol.36, pp.2, 2012, https://doi.org/10.4218/etrij.14.2113.0083