Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Deposition of β-SiC by a LPCVD Method and the Effect of the Crystallographic Orientation on Mechanical Properties

저압 화학기상증착법을 이용한 β-SiC의 증착 및 결정 성장 방위에 따른 기계적 특성 변화

  • Kim, Daejong (Nuclear Materials Division, Korea Atomic Energy Research Institute) ;
  • Lee, Jongmin (Nuclear Materials Division, Korea Atomic Energy Research Institute) ;
  • Kim, Weon-Ju (Nuclear Materials Division, Korea Atomic Energy Research Institute) ;
  • Yoon, Soon Gil (Department of Materials Engineering, College of Engineering, Chungnam National University) ;
  • Park, Ji Yeon (Nuclear Materials Division, Korea Atomic Energy Research Institute)
  • 김대종 (한국원자력연구원 원자력재료개발부) ;
  • 이종민 (한국원자력연구원 원자력재료개발부) ;
  • 김원주 (한국원자력연구원 원자력재료개발부) ;
  • 윤순길 (충남대학교 재료공학과) ;
  • 박지연 (한국원자력연구원 원자력재료개발부)
  • Received : 2012.12.05
  • Accepted : 2013.01.21
  • Published : 2013.01.31
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Abstract

${\beta}$-SiC was deposited onto a graphite substrate by a LPCVD method and the effect of the crystallographic orientation on mechanical properties of the deposited SiC was investigated. The deposition was performed at $1300^{\circ}C$ in a cylindrical hot-wall LPCVD system by varying the deposition pressure and total flow rate. The texture and crystallographic orientation of the SiC were evaluated by XRD. The deposition rate increased linearly with the gas flow rate from 800 sccm to 1600 sccm. It also increased with the pressure but became saturated above a total pressure of 3.3 kPa. In the range of 3.3 - 10 kPa, the preferred orientation changed from the (220) and (311) planes to the (111) plane. The hardness and elastic modulus showed maximum values when the SiC had the (111) preferred orientation, though it gradually decreased upon a change to the (220) and (311) preferred orientations.

Keywords

References

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