Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Design of High-Reliability Differential Paired eFuse OTP Memory for Power ICs

Power IC용 고신뢰성 Differential Paired eFuse OTP 메모리 설계

  • Received : 2012.12.06
  • Accepted : 2013.01.07
  • Published : 2013.02.28
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Abstract

In this paper, a high-reliability differential paired 24-bit eFuse OTP memory with program-verify-read mode for PMICs is designed. In the proposed program-verify-read mode, the eFuse OTP memory can do a sensing margin test with a variable pull-up load in consideration of programmed eFuse resistance variation and can output a comparison result through a PFb (pass fail bar) pin by comparing a programmed datum with its read one. It is verified by simulation results that the sensing resistance is lower with $4k{\Omega}$ in case of the designed differential paired eFuse OTP memory than $50k{\Omega}$ in case of its dual-port eFuse OTP memory.

본 논문에서는 program-verify-read 모드를 갖는 고신뢰성 24bit differential paired eFuse OTP 메모리를 설계하였다. 제안된 program-verify-read 모드에서는 프로그램된 eFuse 저항의 변동을 고려하여 가변 풀-업 부하(variable pull-up load)를 갖는 센싱 마진 테스트 기능을 수행하는 동시에 프로그램 데이터와 read 데이터를 비교하여 PFb(pass fail bar) 핀으로 비교 결과를 출력한다. 그리고 모의실험 결과 program-verify-read 모드에서 24-비트 differential paired eFuse OTP와 24-비트 듀얼 포트 eFuse OTP IP의 센싱 저항은 각각 $4k{\Omega}$과 $50k{\Omega}$으로 differential paired eFuse OTP의 센싱 저항이 작게 나왔다.

Keywords

References

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