한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
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InGaP/InAlGaP 이종 접합구조 태양전지 시뮬레이션 연구

Simulation Study on Heterojunction InGaP/InAlGaP Solar Cell

  • 김정환 (세종대학교 에너지자원공학과)
  • Kim, Junghwan (Department of Energy and Mineral Resources Engineering, Sejong University)
  • 투고 : 2012.11.12
  • 심사 : 2013.04.30
  • 발행 : 2013.05.30
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초록

이종 p-InGaP/N-InAlGaP 접합 화합물 반도체 태양전지의 에피 구조를 제안하였다. 제안된 이종접합구조와 p-InGaP/p-GaAs/N-InAlGaP와 동종 p-InGaP/n-InGaP 접합구조 태양전지의 전류-전압 특성곡선을 시뮬레이션하고 결과를 비교분석하였다. 이종 p-InGaP/N-InAlGaP 접합구조에서 가장 높은 최대출력과 곡선인자(fill factor)를 나타내는 시뮬레이션 결과를 얻었으며 이를 바탕으로 제안된 이종접합 에피구조를 최적화하였다.

An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.

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참고문헌

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