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Annealing Effect of Phosphorus-Doped ZnO Nanorods Synthesized by Hydrothermal Method

Phosphorus-Doped ZnO 나노로드의 열처리 효과

  • Hwang, Sung-Hwan (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,) ;
  • Moon, Kyeong-Ju (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,) ;
  • Lee, Tae Il (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,) ;
  • Myoung, Jae Min (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,)
  • 황성환 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 문경주 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 이태일 (연세대학교 신소재공학과 정보전자재료연구실) ;
  • 명재민 (연세대학교 신소재공학과 정보전자재료연구실)
  • Received : 2013.02.22
  • Accepted : 2013.04.11
  • Published : 2013.05.27

Abstract

An effect of thermal annealing on activating phosphorus (P) atoms in ZnO nanorods (NR) grown using a hydrothermal process was investigated. $NH_4H_2PO_4$ used as a dopant source reacted with $Zn^{2+}$ ions and $Zn_3(PO_4)_2$ sediment was produced in the solution. The fact that most of the input P elements are concentrated in the $Zn_3(PO_4)_2$ sediment was confirmed using an energy dispersive spectrometer (EDS). After the hydrothermal process, ZnO NRs were synthesized and their PL peaks were exhibited at 405 and 500 nm because P atoms diffused to the ZnO crystal from the $Zn_3(PO_4)_2$ particles. The solubility of the $Zn_3(PO_4)_2$ initially formed sediment varied with the concentration of $NH_4OH$. Before annealing, both the structural and the optical properties of the P-doped ZnO NR were changed by the variation of P doping concentration, which affected the ZnO lattice parameters. At low doping concentration of phosphorus in ZnO crystal, it was determined that a phosphorus atom substituted for a Zn site and interacted with two $V_{Zn}$, resulting in a $P_{Zn}-2V_{Zn}$ complex, which is responsible for p-type conduction. After annealing, a shift of the PL peak was found to have occurred due to the unstable P doping state at high concentration of P, whereas at low concentration there was little shift of PL peak due to the stable P doping state.

Keywords

References

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