Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Change of Surface and Electrical Characteristics of Silicon Wafer by Wet Etching(1) - Surface Morphology Changes as a Function of HF Concentration -

습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(1) - 불산 농도에 따른 표면형상 변화 -

  • 김준우 (금오공과대학교 신소재시스템공학부) ;
  • 강동수 (금오공과대학교 신소재시스템공학부) ;
  • 이현용 (금오공과대학교 신소재시스템공학부) ;
  • 이상현 ((주)eCONY) ;
  • 고성우 ((주)eCONY) ;
  • 노재승 (금오공과대학교 신소재시스템공학부)
  • Received : 2013.03.19
  • Accepted : 2013.06.11
  • Published : 2013.06.27
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Abstract

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM ($80^{\circ}$ tilted at ${\times}200$) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 ${\mu}m/min$ was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 $ohm{\cdot}cm$ at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

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