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The Characteristics of Mg0.1Zn0.9O Thin Films on PES Substrate According to Fabricated Conditions by PLD

PLD법으로 PES 기판 위에 제작된 Mg0.1Zn0.9O 박막의 제작 조건에 따른 특성

  • Kim, Sang-Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Lee, Hyun-Min (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Jang, NakWon (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Park, Mi-Seon (Department of Nano Technology, Dong Eui University) ;
  • Lee, Won-Jae (Department of Nano Technology, Dong Eui University) ;
  • Kim, Hong-Seung (Department of Nano Semiconductor Engineering, Korea Maritime University)
  • 김상현 (한국해양대학교 전기전자공학부) ;
  • 이현민 (한국해양대학교 전기전자공학부) ;
  • 장낙원 (한국해양대학교 전기전자공학부) ;
  • 박미선 (동의대학교 융합부품공학과) ;
  • 이원재 (동의대학교 융합부품공학과) ;
  • 김홍승 (한국해양대학교 나노반도체공학과)
  • Received : 2013.07.20
  • Accepted : 2013.07.24
  • Published : 2013.08.01

Abstract

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

Keywords

References

  1. E. Lueder, Proc. SPIE, 64, 3597 (1998).
  2. Z. Suo, E. Y. Ma, H. Gleskova, and S. Wagner, Appl. Phys. Lett., 74, 1177 (1999). https://doi.org/10.1063/1.123478
  3. W. W. Wensa, A. Yamada, K. Takahashi. M. Yoshino, and M. Konagai, J. Appl. Phys., 70, 7119 (1991). https://doi.org/10.1063/1.349794
  4. D. C. Reynolds, D. C. Look, and B. Jogai, Solid State Commun., 99, 873 (1996). https://doi.org/10.1016/0038-1098(96)00340-7
  5. D. C. Look, Mater. Sci. Eng. B, 80, 383 (2001). https://doi.org/10.1016/S0921-5107(00)00604-8
  6. H. S. Kang, J. W. Kim, and S. Y. Lee, J. Appl. Phys., 95, 1246 (2004). https://doi.org/10.1063/1.1633343
  7. Y. Chen, H. J. Ko, S. K. Hong, and T. Yao, Appl. Phys. Lett., 76, 559 (2000). https://doi.org/10.1063/1.125817
  8. A. Ohotomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett., 72, 2466 (1998). https://doi.org/10.1063/1.121384
  9. J. Park, J. Hwang, D. Seo, S. Park, D. Moon, and J. Han, J. KIEEME, 16, 1115 (2003).
  10. B. Z. Dong, G. J. Fang, J. F. Wang, W. J. Guan, and X. Z. Zhao, J. Appl. Phys., 101, 033713 (2007). https://doi.org/10.1063/1.2437572