Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Electrical and Optical Properties of ITZO Thin Films Deposited by RF Magnetron Sputtering

고주파 마그네트론 스퍼터링법에 의해 제작된 ITZO (indium tin zinc oxide) 박막의 전기적 및 광학적 특성

  • Seo, Jin-Woo (Department of Electrical＆Semiconductor Engineering, Chonnam National University) ;
  • Joung, Yang-Hee (Department of Electrical＆Semiconductor Engineering, Chonnam National University) ;
  • Kang, Seong-Jun (Department of Electrical＆Semiconductor Engineering, Chonnam National University)
  • Received : 2013.04.09
  • Accepted : 2013.05.24
  • Published : 2013.08.31
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Abstract

ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.% : 5wt.% : 5wt.%) thin films were fabricated on glass substrates (Eagle 2000) at room temperature with various working pressures (1~7 mTorr) by RF magnetron sputtering. The influence of the working pressure on the structural, electrical, and optical properties of the ITZO thin films were investigated. The XRD and FESEM results showed that all ITZO thin films are amorphous structures with very smooth surfaces regardless of the working pressure. Amorphous ITZO thin films deposited at 3 mTorr showed the best properties, such as a low resistivity, high transmittance, and figure of merit of $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 81 %, and $10.52{\times}10^{-3}{\Omega}^{-1}$, respectively.

본 연구에서는 RF magnetron sputtering 법으로 상온에서 공정압력 (1~7 mTorr) 을 변화시켜가며 유리기판(Eagle 2000) 위에 ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.%: 5wt.%: 5wt.%) 박막을 제작하여, 구조적 특성과 광학적 및 전기적 특성을 조사하였다. XRD 와 FESEM 측정을 통해, 공정압력에 무관하게 모든 ITZO 박막이 부드러운 표면의 비정질 구조를 가지고 있음을 확인할 수 있었다. 공정압력 3mTorr 에서 증착한 ITZO 박막이 비저항 $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 가시광 영역에서 평균 투과도 81 % 와 재료평가지수 $10.52{\times}10^{-3}{\Omega}^{-1}$ 의 가장 우수한 전기적 및 광학적 특성을 나타내었다.

Keywords

References

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