Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지
DOI QR코드

DOI QR Code

New Approach for Transient Radiation SPICE Model of CMOS Circuit

  • Jeong, Sang-Hun (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute, Dept. of Electronic Engineering, Chonbuk National University) ;
  • Lee, Nam-Ho (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute) ;
  • Lee, Jong-Yeol (Dept. of Electronic Engineering, Chonbuk National University) ;
  • Cho, Seong-Ik (Dept. of Electronic Engineering, Chonbuk National University)
  • Received : 2012.10.29
  • Accepted : 2013.05.05
  • Published : 2013.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

Keywords

References

  1. Larry L., "NUCLEAR EVENT DETECTOR", http://www.freepatentsonline.com/, pp. 2, Aug 1987.
  2. George C Messenger, "The effects of radiation on electronic systems", New York : Van Nostrand Reinhold, cop., 1992.
  3. Lewis Cohn, Manfred Espig, Al Wolicki, Mayrant Simons, Clay Rogers, Alfred Costantine, "Transient Radiation Effects on Electronics(TREE) Handbook", Defence Nuclear Agency, 1996.
  4. http://radhome.gsfc.nasa.gov/
  5. https://www.escies.org/
  6. Ahlbin, J., Gadlage, M., Atkinson, N., Narasimha- m, B., Bhuva, B., Witulski, A., Holman, W. Ea- ton, P. ; Massengill, L., "Effect of Multiple -Transistor Charge Collection on Single-Event Transient Pulse Widths", Device and Materials Reliability, IEEE Transactions on, Issue, 99, pp 1, May, 2011.

Cited by

  1. Single-Event Latchup Modeling Based on Coupled Physical and Electrical Transient Simulations in CMOS Technology vol.61, pp.6, 2014, https://doi.org/10.1109/TNS.2014.2362857
  2. Analysis of Angular Dependence of Single-Event Latchup Sensitivity for Heavy-Ion Irradiations of ${\hbox{0.18-}}\mu\hbox{m}$ CMOS Technology vol.62, pp.6, 2015, https://doi.org/10.1109/TNS.2015.2495101