The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Calculation Method of the Breakdown Voltage for the Drain Region with the Spherical Structure in High Voltage Analog CMOS

Spherical 구조를 갖는 고전압용 Analog CMOS의 Drain 역방향 항복전압의 계산 방법

  • Lee, Un Gu (Dept. of Information and Communication, Bucheon University)
  • Received : 2013.04.04
  • Accepted : 2013.08.13
  • Published : 2013.09.01
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Abstract

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

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References

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