Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Nitrogen Monoxide Gas Sensing Characteristics of Transparent p-type Semiconductor CuAlO2 Thin Films

투명한 p형 반도체 CuAlO2 박막의 일산화질소 가스 감지 특성

  • Park, Soo-Jeong (Graduate School of Advanced Electronic Circuit Substrate Engineering, Chungnam National University) ;
  • Kim, Hyojin (Graduate School of Advanced Electronic Circuit Substrate Engineering, Chungnam National University) ;
  • Kim, Dojin (Graduate School of Advanced Electronic Circuit Substrate Engineering, Chungnam National University)
  • 박수정 (충남대학교 차세대전자기판회로학과) ;
  • 김효진 (충남대학교 차세대전자기판회로학과) ;
  • 김도진 (충남대학교 차세대전자기판회로학과)
  • Received : 2013.08.07
  • Accepted : 2013.08.21
  • Published : 2013.09.27
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Abstract

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

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