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Calculation of the radiative lifetime of Wannier-Mott excitons in nanoclusters

  • Kukushkin, Vladimir A. (Department of Plasma Physics and High-Power Electronics, Institute of Applied Physics of the Russian Academy of Science, Advanced School of General and Applied Physics, Nizhny Novgorod State University named after N.I. Lobachevsky)
  • 투고 : 2013.04.18
  • 심사 : 2013.10.01
  • 발행 : 2013.09.25

초록

This study is aimed to calculate the radiative lifetime of Wannier-Mott excitons in nanoclusters of a narrow-bandgap semiconductor embedded in a wide-bandgap one. The nanocluster linear dimensions are assumed to be much larger than the radius of the exciton so that the latter is not destructed by the confinement potential as it takes place in small quantum dots. The calculations were carried out for an example of InAs nanoclusters put into the GaAs matrix. It is shown that the radiative lifetime of Wannier-Mott excitons in such clusters increases with the decrease of the cluster dimensions, this tendency being more pronounced at low temperatures. So, the creation of excitons in nanoclusters of a narrow-bandgap material embedded in a wide-bandgap one can be used to significantly prolong their radiative lifetime in comparison with that of excitons in a bulk semiconductor.

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참고문헌

  1. Bauer, M., Keeling, J., Parish, M.M., López Ríos, P. and Littlewood, P.B. (2013), "Optical recombination of biexcitons in semiconductors", Physical Review B, 87(3), 035302. https://doi.org/10.1103/PhysRevB.87.035302
  2. Berestetskii, V.B., Lifshitz, E.M. and Pitaevsky, L.P. (1982), Quantum Electrodynamics, 2nd Edition, Pergamon Press Ltd, Oxford, UK.
  3. Boggess, T.F., Zhang, L., Deppe, D.G., Huffaker, D.L. and Cao, C. (2001), "Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots", Appl. Phys. Lett., 78(3), 276-278. https://doi.org/10.1063/1.1337638
  4. Elliott, R.J. (1957), "Intensity of optical absorption by excitons", Phys. Rev., 108(6), 1384-1389. https://doi.org/10.1103/PhysRev.108.1384
  5. Frenkel, J. (1931), "On the transformation of light into heat in solids. I", Phys. Rev., 37(1), 17-44. https://doi.org/10.1103/PhysRev.37.17
  6. Harbord, E., Spencer, P., Clarke, E. and Murray, R. (2009), "The influence of size distribution on the luminescence decay from excited states of InAs/GaAs self-assembled quantum dots", Journal of Applied Physics, 105(3), 033507. https://doi.org/10.1063/1.3073934
  7. Knox, R.S. (1963), Theory of Excitons, Academic Press, New York, NY, USA.
  8. Landau, L.D. and Lifshitz, E.M. (1991), Quantum Mechanics, 3rd Edition, Pergamon Press Ltd, Oxford, UK.
  9. Madelung, O. (2004), Semiconductors: Data Handbook, 3rd Edition, Springer, Berlin, Germany.
  10. Musa, I., Massuyeau, F., Cario, L., Duvail, J.L., Jobic, S., Deniard, P. and Faulques, E. (2011), "Temperature and size dependence of time-resolved exciton recombination in ZnO quantum dots", Applied Physics Letters, 99(24), 243107. https://doi.org/10.1063/1.3669511
  11. Schmidt, T., Chizhik, A.I., Chizhik, A.M., Potrick, K., Meixner, A.J. and Huisken, F. (2012), "Radiative exciton recombination and defect luminescence observed in single silicon nanocrystals", Phys. Rev. B, 86(12), 125302. https://doi.org/10.1103/PhysRevB.86.125302
  12. Vurgaftman, I., Meyer, J.R. and Ram-Mohan, L.R. (2001), "Band parameters for III-V compound semiconductors and their alloys", J. Appl. Phys., 89(11), 5815-5875. https://doi.org/10.1063/1.1368156
  13. Wannier, G. (1937), "The structure of electronic excitation levels in insulating crystals", Phys. Rev., 52(3), 191-197. https://doi.org/10.1103/PhysRev.52.191
  14. Wu, C.L. and Lin, G.R. (2012), "Inhomogeneous linewidth broadening and radiative lifetime dispersion of size dependent direct bandgap radiation in Si quantum dot", AIP Advances, 2(4), 042162. https://doi.org/10.1063/1.4769362