전자공학회논문지 (Journal of the Institute of Electronics and Information Engineers)

  • 제50권11호
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  • Pages.219-225
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  • 2013
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  • 2287-5026(pISSN)
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  • 2288-159X(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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3차원 낸드 플레쉬에서 타원형 GAA SONOS 셀의 프로그램과 삭제 특성 연구

Study of Program and Erase Characteristics for the Elliptic GAA SONOS Cell in 3D NAND Flash Memory

  • 최득성 (영남이공대학교 전자정보계열) ;
  • 이승희 (영남이공대학교 전자정보계열) ;
  • 박성계 (SK하이닉스(주) 메모리연구소)
  • 투고 : 2013.08.28
  • 발행 : 2013.11.25
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초록

본 논문은 소노스(SONOS) 형태의 타원형 게이트 올 어라운드(GAA) 구조를 갖는 플레쉬 셀의 프로그램과 삭제 특성을 채널의 이심률 변화에 대해 연구 하였다. 타원형 GAA SONOS 셀의 쓰기와 삭제에 대한 해석적 모델을 제안하고 평가하였다. 점진적 계단형 펄스 프로그램(ISPP)시 타원의 이심률이 증가할수록 인가 전압에 대해 문턱전압이 비선형적으로 변화한다. 이는 2차원 소노스 구조나 원형 3차원 GAA 구조에서 선형적 특성을 보이는 것과는 매우 다른 모습이다. ISPP 특성에 대한 모사의 결과는 실험적 결과와 잘 부합됨을 발견할 수 있다.

Program and erase characteristics of the elliptic gate all around (e-GAA) SONOS cell have been studied as the variation of eccentricity of the channel. An analytic program and erase model for the elliptic GAA SONOS cell is proposed and evaluated. The model shows that the ISPP (incremental-step-pulse programming) property is changed non-linearly as the eccentricity of the e-GAA SONOS cell is increased. It is differently from the well known linear relationship for that of 2D SONOS and even 3D circular SONOS cell with program bias. We can find that the simulation results of ISPP characteristics are in accord with the experimental data.

키워드

참고문헌

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