Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate

사파이어 기판에 펄스 레이저 증착법으로 성장된 AlN 박막의 특성

  • Jeong, Eun-Hee (Advanced Ceramic Materials Engineering, Gangnung-wonju National University) ;
  • Chung, Jun-Ki (Technology Innovation Center for Fine Ceramics, Gangnung-wonju National University) ;
  • Jung, Rae-Young (Technology Innovation Center for Fine Ceramics, Gangnung-wonju National University) ;
  • Kim, Sung-Jin (Technology Innovation Center for Fine Ceramics, Gangnung-wonju National University) ;
  • Park, Sang-Yeup (Technology Innovation Center for Fine Ceramics, Gangnung-wonju National University)
  • 정은희 (강릉원주대학교 세라믹신소재공학과) ;
  • 정준기 (강릉원주대학교 파인세라믹기술혁신센타(FCRIC)) ;
  • 정래영 (강릉원주대학교 파인세라믹기술혁신센타(FCRIC)) ;
  • 김성진 (강릉원주대학교 파인세라믹기술혁신센타(FCRIC)) ;
  • 박상엽 (강릉원주대학교 파인세라믹기술혁신센타(FCRIC))
  • Received : 2013.09.17
  • Accepted : 2013.11.16
  • Published : 2013.11.30
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Abstract

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

Keywords

References

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