ETRI Journal

  • 제35권4호
  • /
  • Pages.734-737
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  • 2013
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

  • Jung, Soon-Won (Components & Materials Research Laboratory, ETRI) ;
  • Na, Bock Soon (Components & Materials Research Laboratory, ETRI) ;
  • Baeg, Kang-Jun (Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute) ;
  • Kim, Minseok (Components & Materials Research Laboratory, ETRI, School of Electrical Engineering, Korea University) ;
  • Yoon, Sung-Min (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Kim, Juhwan (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) ;
  • Kim, Dong-Yu (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) ;
  • You, In-Kyu (Components & Materials Research Laboratory, ETRI)
  • 투고 : 2012.06.26
  • 심사 : 2013.05.02
  • 발행 : 2013.08.01
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초록

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

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참고문헌

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피인용 문헌

  1. Inkjet-printed organic thin-film transistor and antifuse capacitor for flexible one-time programmable memory applications vol.64, pp.1, 2013, https://doi.org/10.3938/jkps.64.74
  2. Flexible organic transistors based on a solution-sheared PVDF insulator vol.3, pp.47, 2013, https://doi.org/10.1039/c5tc02488a
  3. Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate vol.33, pp.5, 2013, https://doi.org/10.1116/1.4927367
  4. Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate vol.4, pp.20, 2013, https://doi.org/10.1039/c6tc00083e
  5. High-frequency organic rectifiers through interface engineering vol.7, pp.4, 2013, https://doi.org/10.1557/mrc.2017.100
  6. pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories vol.10, pp.None, 2013, https://doi.org/10.1021/acs.jpclett.9b00864
  7. Vacuum-free fabrication of a low-voltage multi-bit memory device based on a ferroelectric polymer and photosensitive film vol.14, pp.2, 2013, https://doi.org/10.1049/mnl.2018.5414
  8. Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends vol.11, pp.8, 2013, https://doi.org/10.1021/acsami.8b20571
  9. Recent Advance of Flexible Organic Memory Device vol.1, pp.1, 2013, https://doi.org/10.22895/jse.2020.0009