JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Wide Output Range, High Power Efficiency Reconfigurable Charge Pump in 0.18 mm BCD process

  • Park, Hyung-Gu (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jang, Jeong-A (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Cho, Sung Hun (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Juri (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Sang-Yun (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Tiwari, Honey Durga (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Pu, Young Gun (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hwang, Keum Cheol (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yang, Youngoo (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Kang-Yoon (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Seo, Munkyo (College of Information and Communication Engineering, Sungkyunkwan University)
  • Received : 2014.07.11
  • Accepted : 2014.10.01
  • Published : 2014.12.30
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Abstract

This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using $0.18{\mu}m$ BCD process with high power MOSFET options, and the die area is $1870{\mu}m{\times}1430{\mu}m$. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.

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References

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