Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of the Bonding Structure and Thickness on the Leakage Current of Semiconductors as Insulators

반도체 절연박막의 두께변화와 결정성에 대한 누설전류의 의존성

  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • Received : 2014.04.17
  • Accepted : 2014.12.11
  • Published : 2014.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

SiOC films were prepared as insulators for displays by sputtering at low temperatures, and the relationship with the electrical properties waaas examined. The electrical properties of SiOC films were affected by the annealing process, and SiOC films annealed at 100oC showed a significant increase in thickness and a decrease in the reflective index. XRD revealed an increase in the degree of the amorphous structure. Moreover, the capacitance and leakage current of the SiOC films annealed at 100oC decreased. These characteristics of SiOC films highlight their potential as ideal insulators. Amorphous SiOC films by the reduction of polarization are dependent on the elongation effect of the bonding lengths in the structure and the thickness. The properties of these SiOC films are suitable for low temperature displays.

디스플레이를 위한 반도체 절연막으로 적합한 SiOC 박막의 특성을 살펴보기 위해서 스퍼터를 이용한 SiOC 박막을 증착하고 전기적인 특성을 조사하였다. SiOC 박막의 절연성은 열처리 온도에 따라서도 달라졌으며, 100도에서 열처리한 박막의 두께는 증가하고 굴절률은 감소하였으며, XRD의 비정질 특성이 높아지고, 커패시턴스의 감소와 누설전류가 감소하는 특성이 관찰되었다. SiOC 박막의 누설전류 감소의 특성은 절연막으로서의 특성이 개선되고 있다는 것을 의미하며, 두께의 증가현상 또한 누설전류가 감소할 수 있는 조건을 잘 만들고 있었다. 분극의 감소에 의한 비정질의 특성은 SiOC박막을 구성하고 있는 원자 간의 배열이 불규칙적으로 변하고 원자 사이의 결합길이가 최대한 길어지면서 이루어졌기 때문이며, 따라서 두께가 증가하였다. 100도에서 열처리 한 박막에서 두께가 증가하였으며, 누설전류가 감소하였다. 스퍼터에 의한 SiOC 박막의 100도 온도에 의한 극적인 누설전류의 감소는 저온공정이 필수적인 디스플레이용 반도체소자에서 적합한 절연막 임을 확인할 수 있었다.

Keywords

References

  1. S. Fernandez, A. Martinez-Steele, J.J. Gandia, F.B. Naranjo, "Radio frequency sputter deposition of high quality conductive and transparent ZnO:Al films on polymer substrates forthin film solar cells application," Thin Solid Films, 517, 3152-3156, 2009. DOI: http://dx.doi.org/10.1016/j.tsf.2008.11.097
  2. Min Su Kim, Kwang Gug Yim, Gae Young Leem, Soaram Kim, Giwoong Nam, Dong Yul Lee, Jin Soo Kim and Jong Su Kim, "Thickness dependence of properties of ZnO thin films on porous silicon grown by plasma assisted molecular beam epitaxy," Journal of the Korean Physical Society, 59, 2354-2361, 2011. DOI: http://dx.doi.org/10.3938/jkps.59.2354
  3. Kyoungchul Shin, K. Prabakar, Wean-Pil Tai, Jae Hee Oh, Chongmu Lee, Dong Wha Park and Wha Swung Ahn, "The structural and photoluminescence properties of Al:ZnO/porous silicon," Journal of the Korean Physical Society, 45, 1288-1291. 2004.
  4. Tae Eun Park, Dong Chan Kim, Bo Hyun Kong and Hyung Koun Cho, "Structural and potical properties of ZnO thin films grown by RF magnetron sputtering on Si substrates," Journal of the Korean Physical Society, 45, S697-S700, 2004.
  5. T. Oh, "Organic thin film transistors using pentacene and SiOC film," IEEE transactions on Nanotechnology, Vol. 5, 23-28, 2006. DOI: http://dx.doi.org/10.1109/TNANO.2005.858591
  6. T. Oh, and C. H. Kim, "Study on characteristic properties of annealed SiOC film prepared by inductively coupled plasma chemical vapor deposition," IEEE Trans. Plasma Science, 38, 1598-1602, 2010. DOI: http://dx.doi.org/10.1109/TPS.2010.2049665
  7. T. Oh and H. B. Kim, "Pentacene thin film trasnsistors on PMMA treated $SiO_2$", Transactions on Electrical and Electronic Materials, 7(7), 639-642, 2006.
  8. Teresa Oh, "Comparision between organic thin films deposited by using CCP-CVD and ICP-CVD," J. Korean Phys. Soc. 55, 1950-1954, 2009. DOI: http://dx.doi.org/10.3938/jkps.55.1950
  9. P. Masri, "Silicon carbide and silicon carbide- based structures: The physics of epitaxy", Surface science reports, 48, 1-20, 2002. DOI: http://dx.doi.org/10.1016/S0167-5729(02)00099-7
  10. Jeong, J. K. et al. Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors. Appl. Phys. Lett. 95, 123505 (2009). DOI: http://dx.doi.org/10.1063/1.3236694
  11. E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim and S. Y. Lee, Localization effect of a current-path in amorphous In -Ga-Zn-O thin film transistors with a highly doped buried-layer. Thin Solid Films, 519, 4347-4350 (2011). DOI: http://dx.doi.org/10.1016/j.tsf.2011.02.033