Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Electrical and Optical Properties of Sb-doped SnO2 Thin Films Fabricated by Pulsed Laser Deposition

펄스레이저 공정으로 제조한 Sb가 도핑된 SnO2 박막의 전기적 및 광학적 특성

  • Jang, Ki-Sun ;
  • Lee, Jung-Woo (Department of Materials Science & Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University) ;
  • Kim, Joongwon (Department of Materials Science & Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University) ;
  • Yoo, Sang-Im (Department of Materials Science & Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University)
  • 장기선 (삼성 디스플레이 CAE팀) ;
  • 이정우 (서울대학교 공과대학 재료공학부 및 신소재공동연구소) ;
  • 김중원 (서울대학교 공과대학 재료공학부 및 신소재공동연구소) ;
  • 유상임 (서울대학교 공과대학 재료공학부 및 신소재공동연구소)
  • Received : 2013.12.12
  • Accepted : 2014.01.20
  • Published : 2014.01.31
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Abstract

We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.

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References

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