Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate

다양한 펄스 반복률에서의 NPN BJT (Bipolar Junction Transistor)의 파괴 특성에 관한 연구

  • Received : 2014.02.10
  • Accepted : 2014.02.19
  • Published : 2014.03.01
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Abstract

This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.

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References

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