한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권5호
  • /
  • Pages.269-275
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  • 2014
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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화학습식공정법을 이용한 용액 농도 및 시간에 따른 ZnS 완충층 특성에 대한 분석

Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time

  • 손경태 (한국교통대학교 전자공학과) ;
  • 김종완 ((주)맥사이언스) ;
  • 김민영 (한국교통대학교 전자공학과) ;
  • 신준철 (한국교통대학교 정보기술융합학과) ;
  • 조성희 (한국교통대학교 정보기술융합학과) ;
  • 임동건 (한국교통대학교 전자공학과)
  • Son, Kyeongtae (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Kim, Jongwan (McScience Inc.) ;
  • Kim, Minyoung (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Shin, Junchul (Department of IT Convergence, Korea National University of Transportation) ;
  • Jo, Sunghee (Department of IT Convergence, Korea National University of Transportation) ;
  • Lim, Donggun (Department of Electronic Engineering, Korea National University of Transportation)
  • 투고 : 2014.02.17
  • 심사 : 2014.03.28
  • 발행 : 2014.05.01
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초록

In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin films from $NH_3/SC(NH_2)_2/ZnSO_4$ solutions at $90^{\circ}C$. ZnS thin films have been prepared onto ITO glass. The concentrations of $ZnSO_4$ and $NH_3$ were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals. The optimal concentration of $ZnSO_4$ and $NH_3$ was 0.085 M and 1.6 M, respectively.

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참고문헌

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