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A study on the crystalline phases of AlN single crystals grown by PVT method

PVT 법으로 성장된 AlN 단결정의 결정상에 관한 연구

  • Kang, Seung-Min (Department of Advanced Materials Science and Engineering, Hanseo University)
  • Received : 2014.03.28
  • Accepted : 2014.04.14
  • Published : 2014.04.30

Abstract

AlN (Aluminum Nitride) crystals were grown by a PVT (Physical Vapor Transport) method and were characterized to phases on the growth temperature. The crystals phase and morphology were analyzed using an optical stereo-microscope and the optimum temperature for the growing was determined. In this report, the characteristics of the AlN crystals grown at various temperatures were reported.

PVT(물리 기상 이동법, Physical Vapor Transport) 법을 적용하여 질화알루미늄(AlN, Aluminum Nitride) 단결정을 성장하였으며, 성장된 결정의 결정성과 성장 온도에 따른 상에 대하여 고찰하였다. 성장된 단결정은 광학현미경을 이용하여 결정의 상을 관찰하였고, 관찰된 결과를 비교 분석하여 본 실험에 적용된 성장 장치에서의 최적의 성장 온도 조건을 설정할 수 있었다. 본 연구에서는 AlN 단결정 성장 결과를 비교 고찰하여 보고하고자 한다.

Keywords

References

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