Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Compositional Study of Surface, Film, and Interface of Photoresist-Free Patternable SnO2 Thin Film on Si Substrate Prepared by Photochemical Metal-Organic Deposition

  • Choi, Yong-June (Department of Materials Science and Engineering, Yonsei University) ;
  • Kang, Kyung-Mun (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Hyung-Ho (Department of Materials Science and Engineering, Yonsei University)
  • Received : 2014.03.07
  • Accepted : 2014.03.26
  • Published : 2014.03.30
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Abstract

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

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References

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