Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE

r-Plane sapphire 위에 HVPE에 의해 성장한 a-plane GaN에피텍셜층의 V/III족 ratio에 따른 특성 변화

  • Ha, Ju-Hyung (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Park, Mi-Seon (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Lee, Won-Jae (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Choi, Young-Jun (LumiGNtech Co., Ltd.) ;
  • Lee, Hae-Yong (LumiGNtech Co., Ltd.)
  • 하주형 (동의대학교 융합부품공학과 전자세라믹센터) ;
  • 박미선 (동의대학교 융합부품공학과 전자세라믹센터) ;
  • 이원재 (동의대학교 융합부품공학과 전자세라믹센터) ;
  • 최영준 ((주)루미지엔테크) ;
  • 이혜용 ((주)루미지엔테크)
  • Received : 2014.06.05
  • Accepted : 2014.06.18
  • Published : 2014.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have been investigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surface roughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as the increasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RC and the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/III ratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shaped azimuthal dependence over $360^{\circ}$ angle range was observed for all samples. At V/III ratio = 10, the difference of FWHM of a-plane GaN between $0^{\circ}$ and $90^{\circ}$ was 439 arcsec revealed as the lowest value in the 4 samples.

V/III족 ratio의 변화에 따른 r-plane의 sapphire 위에 HVPE로 성장한 a-plane GaN 에피텍셜층의 특성변화를 연구하였다. V/III족 ratio가 증가함에 따라서, a-plane (11-20) GaN에 대한 Rocking Curve의 FWHM의 값이 감소하며, 성장된 GaN의 표면 거칠기도 감소하고, 성장성도는 증가하다가 V/III족 ratio 7까지는 증가하다가 다시 감소하는 경향을 보여준다. 즉 V/III족 ratio 10에서 a-plane (11-20) GaN에 대한 Rocking Curve의 FWHM의 가장 작은 829 arcsec값을 보이고, 표면거칠기도 가장 작은 1.58 nm 값을 보인다. 또한 광학현미경상에서 관찰되는 내부 Crack 또는 void가 가장 적게 발생하였다. 그리고 M모양의 Azimuth angle 의존도를 전 샘플에서 보이며, V/III족 ratio 10에서 FWHM 최대값과 최소값의 편차값이 439 arcscec로 가장 작은 차이를 보였다.

Keywords

References

  1. J. Jang, G. Yoo and O. Nam, "Current status of non-/semi-polar GaN based light emitting diodes", J. Photon. Sci. Technol. 1 (2011) 1.
  2. S. Nakamura, T. Mukai and M. Senoh, "High-power GaN P-N junction blue-light-emitting diodes", Jpn. J. Appl. Phys. 30 (1991) L1998. https://doi.org/10.1143/JJAP.30.L1998
  3. S. Nakamura, "InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates", Mater. Sci. Eng. B 59 (1999) 370. https://doi.org/10.1016/S0921-5107(98)00354-7
  4. T. deguchi, K. Sekiguchi, A, Nakamura, T. Sota, T. Matsuo, S. Chichibu and S. Nakamura, "Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure", Jpn. J. Appl. Phys. Part 2-Lett. 38(8B) L914 (1999) https://doi.org/10.1143/JJAP.38.L914
  5. F. Bernardini, V. Fiorentini and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides", Phys. Rev. B 56 (1997) R10024. https://doi.org/10.1103/PhysRevB.56.R10024
  6. P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche and K.H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes", Nature 406 (2000) 865. https://doi.org/10.1038/35022529
  7. H.M. Ng, "Molecular-beam epitaxy of $GaN/Al_xGa_{1-x}N$ multiple quantum wells on R-plane (1012) sapphire substrates" Appl. Phys. Lett. 80 (2000) 4369.
  8. E. Kuokstis, C.Q. Chen, M.E. Gaevski, W.H. Sun, J.W. Yang, G. Simin, M.A. Khan, H.P. Maruska, D.W. Hill, M.C. Chou, J.J. Gallagher and B. Chai, "Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells",Appl. Phys. Lett. 81 (2002) 4130. https://doi.org/10.1063/1.1524298
  9. M.D. Craven, P. Waltereit, J.S. Speck and S.P. Den-Baars, "Well-width dependence of photoluminescence emission from a-plane GaN on AlGaN multiple quantum wells", Appl. Phys. Lett. 84 (2004) 496. https://doi.org/10.1063/1.1638884
  10. J. Liu, X. Liu, C. Li, H. Wei, Y. Guo, C. Jiao, Z. Li, X. Xu, H. Song, S. Yang, Q. Zhu, Z. Wang, A. Yang, T. Yang and H. Wang, "Investigation of cracks in GaN films grown by combined hydride and metal organic vapor phase epitaxial method", Nanoscale Rearch Lett. 6 (2011) 69. https://doi.org/10.1186/1556-276X-6-69
  11. Y.-H. Wu, C.-H. Lee, C.-M. Chu, Y.-H. Yeh, C.-L. Chen and W.-I Lee, "A simple growth method to produce aplane GaN thick films by hydride vapor phase epitaxy", Jpn. J. of Appl. Phys. 52 (2013) 08JB08. https://doi.org/10.7567/JJAP.52.08JB08
  12. T. Bottcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel and J.S. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Appl. Phys. Lett. 78 (2001) 1976. https://doi.org/10.1063/1.1359780
  13. H. Wang, C. Chen, Z. Gong, J. Zhang, M. Gaevski, M. Su, J. Yang and M.A. Khan, "Anisotropic structural characteristics of (110) GaN templates and coalesced epitaxial lateral overgrown films deposited on (102) sapphire", Appl. Phys. Lett. 84 (2004) 499. https://doi.org/10.1063/1.1644054
  14. Paskova T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta and B. Monemar, "Nonpolar a-plane HVPE GaN growth and in-plane anisotropic properties", Journal of Crystal Growth 281 (2005) 55. https://doi.org/10.1016/j.jcrysgro.2005.03.013

Cited by

  1. The effects of growth temperatures and V/III ratios at 1000℃ for a-plane GaN epi-layer on r-plane sapphire grown by HVPE vol.25, pp.2, 2015, https://doi.org/10.6111/JKCGCT.2015.25.2.056
  2. Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method vol.26, pp.3, 2016, https://doi.org/10.6111/JKCGCT.2016.26.3.089