Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Relation of Conduction Path and Subthreshold Swing for Doping Profile of Asymmetric Double Gate MOSFET

비대칭 DGMOSFET의 도핑분포함수에 따른 전도중심과 문턱전압이하 스윙의 관계

  • Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
  • Received : 2014.04.27
  • Accepted : 2014.06.16
  • Published : 2014.08.31
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Abstract

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널 내 도핑분포함수에 따른 전도중심과 문턱전압이하 스윙의 관계에 대하여 분석하였다. 비대칭 DGMOSFET의 채널크기는 매우 작기 때문에 불순물의 수가 매우 작으므로 고 도핑된 채널의 경우에 대하여 분석하였다. 이를 위하여 포아송방정식에서 해석학적 전위분포모델을 유도하였으며 도핑분포함수는 가우스분포함수를 사용하였다. 해석학적 전위분포모델을 이용하여 전도중심 및 문턱전압이하 스윙모델을 유도하였으며 채널길이 및 채널두께가 변할 때, 도핑분포함수의 변수인 이온주입범위 및 분포편차에 따른 전도중심 및 문턱전압이하 스윙의 변화를 관찰하였다. 결과적으로 전도중심이 상단게이트 단자로 이동할 때, 문턱전압이하 스윙 값은 감소하였으며 단채널 효과에 의하여 채널길이 감소 및 채널두께 증가에 따라 문턱전압이하 스윙 값은 증가하였다.

Keywords

References

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