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Effect of Electron Irradiation on the Structural Electrical and Optical Properties of ITO/ZnO Thin Films

전자빔 조사에너지에 따른 ITO/ZnO 적층박막의 구조적, 전기적, 광학적 특성 변화

  • Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 김선경 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2014.07.18
  • Accepted : 2014.08.04
  • Published : 2014.09.30

Abstract

The influence of electron irradiation energy(eV) on the structural, electrical and optical properties of ITO/ZnO bi-layered films prepared with RF magnetron sputtering has been investigated. The ITO/ZnO show the lowest resistivity of $2.8{\times}10^{-4}{\Omega}cm$. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film irradiated at 900 eV shows 82---- of optical transmittance in this study. By comparison of figure of merit, it was observed the optical transmittance and electrical resistivity of the films were dependent on the electron irradiation energy and optoelectrical performance of ITO/ZnO film is improved with electron irradiation.

Keywords

References

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